Abstract
We investigate axial GaAs/InGaAs/GaAs heterostructures embedded in GaAs nanopillars via catalyst-free selective-area metal-organic chemical vapor deposition. Structural characterization by transmission electron microscopy with energy dispersive x-ray spectroscopy (EDS) indicates formation of axial In x Ga1-x As (x∼0.20) inserts with thicknesses from 36 to 220 nm with ±10% variation and graded Ga:In transitions controlled by In segregation. Using the heterointerfaces as markers, the vertical growth rate is determined to increase linearly during growth. Photoluminescence from 77 to 290 K and EDS suggest the presence of strain in the shortest inserts. This capability to control the formation of axial nanopillar heterostructures is crucial for optimized device integration. © 2010 American Institute of Physics.
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Shapiro, J. N., Lin, A., Wong, P. S., Scofield, A. C., Tu, C., Senanayake, P. N., … Huffaker, D. L. (2010). InGaAs heterostructure formation in catalyst-free GaAs nanopillars by selective-area metal-organic vapor phase epitaxy. Applied Physics Letters, 97(24). https://doi.org/10.1063/1.3526734
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