FinFET is considered as the potential contender in the era of Multigate FETs. This manuscript for the first time presents the structural variations for Junctionless FinFET devices at IRDS sub-5nm technology node. Four JL-FinFET novel structures are proposed here namely Junctionless Middlegate-U shape FinFET (JL-MG-U-FinFET), Junctionless U shaped FinFET (JL-U-FinFET), Junctionless Inverted-U shaped FinFET (JL-Inv-U-FinFET), and Junctionless Double gate- Inverted-U shaped FinFET (JL-DG-Inv-U-FinFET). The electrical and analog/RF performances of these structures are compared and it is found that JL-DG-Inv-U-FinFET gives better performance in terms of minimizing short channel effects as well as in terms of analog/RF characteristics. The I ON /I OFF ratio values for (JL-MG-U-FinFET, JL-U-FinFET, JL-Inv-U-FinFET, and JL-DG-Inv-U-FinFET) are observed as 8.5 × 10 6 , 1.2 × 10 9 , 2.04 × 10 8 , and 1.1 × 10 10 , respectively. Similarly, the SS values are noted as 93.44 mV dec −1 , 70.87 mV dec −1 , 70.61 mV dec −1 , and 62.1 mV dec −1 for the respective configurations. Furthermore, the effect of variation in geometrical parameters such as gate length (L g ), U-shaped fin width (W U-fin ), and U-shaped fin height (H U-fin ) on DC and analog/RF characteristics is also explored. It has been observed that the DC parameters such as I on /I off ratio, SS are better for higher L g , lower W U-fin , and higher H U-fin . Moreover, the JL-DG-Inv-U-FinFET based Common Source (CS) amplifier produced a gain of 5.2. The results reported in this study will aid device engineers in selecting better geometrical parameters to achieve improved JL-DG-Inv-U-FinFET performance.
CITATION STYLE
Ramakrishna, K. V., Valasa, S., Bhukya, S., & Vadthiya, N. (2023). Optimizing U-Shape FinFETs for Sub-5nm Technology: Performance Analysis and Device-to-Circuit Evaluation in Digital and Analog/Radio Frequency Applications. ECS Journal of Solid State Science and Technology, 12(9), 093007. https://doi.org/10.1149/2162-8777/acf5a2
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