Abstract
ZnO(0001) single crystals have been implant doped with a maximum of 5 at. % of Co at low temperatures. While as-implanted crystals do not show ferromagnetic properties, postimplantation annealing leads to the transformation of the implanted Co ions into small metallic clusters giving rise to a pronounced hysteresis upon magnetization reversal. The dispersed Co ions are in 2+ oxidation state. Positive magnetoresistance could be observed at low temperatures. © 2008 American Institute of Physics.
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CITATION STYLE
Potzger, K., Kuepper, K., Xu, Q., Zhou, S., Schmidt, H., Helm, M., & Fassbender, J. (2008). High cluster formation tendency in Co implanted ZnO. Journal of Applied Physics, 104(2). https://doi.org/10.1063/1.2955717
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