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Chemical Vapor Deposited Polycrystalline Silicon

  • Cowher M
  • Sedgwick T
Journal of The Electrochemical Society (1972) 119(11) 1565
DOI: 10.1149/1.2404043
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Abstract

Mirror smooth thin films of polycrystalline silicon suitable for FET device processing have been chemically vapor deposited from silane at 650~ on different insulating materials.

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Cowher, M. E., & Sedgwick, T. O. (1972). Chemical Vapor Deposited Polycrystalline Silicon. Journal of The Electrochemical Society, 119(11), 1565. https://doi.org/10.1149/1.2404043

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