This report describes the SNM calculation and analysis of SRAM cell which are obtained from simulations performed in Cadence Virtuoso 90 nm technology. The SRAM cell structure is implemented with a compact structure of six transistors. Static noise margin is found from the butterfly curve obtained for read, write, and hold modes of operation.
CITATION STYLE
Jose, A. A., & Balan, N. C. (2016). Static noise margin analysis of 6T SRAM cell. In Advances in Intelligent Systems and Computing (Vol. 394, pp. 249–258). Springer Verlag. https://doi.org/10.1007/978-81-322-2656-7_22
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