Abstract
The surface-potential-based compact model for quantum effects in planar and double-gate MOSFETs is developed. The surface-potentials at source and drain sides are calculated with the effective field approximation and the quantum charge epxression. The drain current is calculated with the drift-diffusion model and quantum correction of the lateral field. One set of equations is used for both planar and double-gate structures.
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CITATION STYLE
Serov, A. Y., Hong, S. M., Park, Y. J., & Min, H. S. (2007). Surface-potential-based compact model for quantum effects in planar and double-gate MOSFET. In 2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 (pp. 297–300). Springer-Verlag Wien. https://doi.org/10.1007/978-3-211-72861-1_71
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