This paper reports the integration of an electrochromic inorganic oxide semiconductor (WO3) into an electrolyte gated transistor device. The resulting electrochromic transistor (EC-T) is a novel optoelectronic device, exhibiting simultaneous optical and electrical modulation. These devices show an On- Off ratio of 5×106and a transconductance (gm) of 3.59 mS, for gate voltages (VG) between −2 and 2 V, which, to the authors knowledge, are one of the best values ever reported for this type of electrochemical transistors. The simple and low-cost processing together with the electrical/optical performances, well supported into a comprehensive analysis of device physics, opens doors for a wide range of new applications in display technologies, biosensors, fuel cells or electrochemical logic circuits.
CITATION STYLE
Grey, P., Pereira, L., Pereira, S., Barquinha, P., Cunha, I., Martins, R., & Fortunato, E. (2016). Electrochemical transistor based on tungsten oxide with optoelectronic properties. In IFIP Advances in Information and Communication Technology (Vol. 470, pp. 542–550). Springer New York LLC. https://doi.org/10.1007/978-3-319-31165-4_51
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