Schottky-Diode Design for Future High-Speed Telecommunications

Abstract

The impact of 5G communication is expected to be widespread and transformative. It promises to provide faster mobile broadband speeds, lower latency, improved network reliability and capacity, and more efficient use of wireless technologies. The Schottky diode, a BN/GaN layered composite contacting bulk aluminum, is theoretically plausible to harvest wireless energy above X-band. According to our first principle calculation, the insertion of GaN layers dramatically influences the optical properties of the layered composite. The relative dielectric constant of BN/GaN layered composite as a function of layer-to-layer separation is investigated where the optimized dielectric constant is ~2.5. To push the dielectric constant approaching ~1 for high-speed telecommunication, we upgrade our BN-based Schottky diode via nanostructuring, and we find that the relative dielectric constant of BN monolayer (semiconductor side) can be minimized to ~1.5 only if it is deposited on an aluminum monolayer (metal side). It is rare to find a semiconductor with a dielectric constant close to 1, and our findings may push the cut-off frequency of the Al/BN-based rectenna to the high-band 5G network.