In0.5Ga0.5N layers by atomic layer deposition

Abstract

We present an ALD approach to metastable In1−xGaxN with 0.1 < 0.5 based on solid In- and Ga-precursors that were co-sublimed into the deposition chamber in one pulse. A near In0.5Ga0.5N film with a bandgap value of 1.94 eV was achieved on a Si(100) substrate. Epitaxial In1−xGaxN(0002) was successfully grown directly on the 4H-SiC(0001) substrate.