Review Paper on New Technology Based Nanoscale Transistor

Abstract

Owing to the fact that MOSFETs can be effortlessly assimilated into ICs, they have become the heart of the growing semiconductor industry. The need to procure low power dissipation, high operating speed and small size requires the scaling down of these devices. This fully serves the Moore's Law. But scaling down comes with its own drawbacks which can be substantiated as the Short Channel Effect. The working of the device deteriorates owing to SCE. In this paper, the problems of device downsizing as well as how the use of SED based devices prove to be a better solution to device downsizing has been presented. As such the study of Short Channel effects as well as the issues associated with a nanoMOSFET is provided. The study of the properties of several Quantum dot materials and how to choose the best material depending on the observation of clear Coulomb blockade is done. Specifically, a study of a graphene single electron transistor is reviewed. Also a theoretical explanation to a model designed to tune the movement of electrons with the help of a quantum wire has been presented. KEYWORDS MOSFET, SCE, Moore's Law, Nanoscale MOSFET, SED, SET, Coulomb Blockade, Graphene, quantum dots, quantum wire.