0.35 μm cmos optical sensor for an integrated transimpedance circuit

Abstract

This paper presents an integrated optical receiver which consists of an integrated photodetector, and a transimpedance circuit. A series inductive peaking is used for enhancing the bandwidth. The proposed structure operates at a data rate of 10 Gb/s with a BER of 10-20 and was implemented in a 0.35 μm CMOS process. The integrated photodiode has a capacitance of 0.01 pF which permits to the structure to achieve a wide bandwidth (5.75 GHz) with only one inductor before the last stage; hence a smaller silicon area is maintained. The proposed TIA has a gain of 36.56 dBΩ (67.57 KΩ), and an input courant noise level of about 25.8 pA/Hz0.5. It consumes a DC power of 87.4 mW from 3.3 V supply voltage.