Opening up a band gap and finding a suitable substrate material are two big challenges for building graphene-based nanodevices. Using state-of-the-art hybrid density functional theory incorporating long-range dispersion corrections, we investigate the interface between optically active graphitic carbon nitride (g-C 3N 4) and electronically active graphene. We find an inhomogeneous planar substrate (g-C 3N 4) promotes electron-rich and hole-rich regions, i.e., forming a well-defined electron-hole puddle, on the supported graphene layer. The composite displays significant charge transfer from graphene to the g-C 3N 4 substrate, which alters the electronic properties of both components. In particular, the strong electronic coupling at the graphene/g-C 3N 4 interface opens a 70 meV gap in g-C 3N 4-supported graphene, a feature that can potentially allow overcoming the graphene's band gap hurdle in constructing field effect transistors. Additionally, the 2-D planar structure of g-C 3N 4 is free of dangling bonds, providing an ideal substrate for graphene to sit on. Furthermore, when compared to a pure g-C 3N 4 monolayer, the hybrid graphene/g-C 3N 4 complex displays an enhanced optical absorption in the visible region, a promising feature for novel photovoltaic and photocatalytic applications. © 2012 American Chemical Society.
CITATION STYLE
Du, A., Sanvito, S., Li, Z., Wang, D., Jiao, Y., Liao, T., … Smith, S. C. (2012). Hybrid graphene and graphitic carbon nitride nanocomposite: Gap opening, electron-hole puddle, interfacial charge transfer, and enhanced visible light response. Journal of the American Chemical Society, 134(9), 4393–4397. https://doi.org/10.1021/ja211637p
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