Additive nanolithography with electron beam induced deposition is applied to generate a nanostructured integrated field emission electron source. The source is built into a lithographically fabricated pattern of connecting lines on a chip. Current stabilizing resistors are integrated in to the connecting lines with the same technique. Field emission microscope investigation of deposited supertips proves that a confined emission is delivered from conducting tips into a beam divergence angle of ±7°. The reduced brightness of the deposited supertips is evaluated. A 10 fold higher reduced brightness is observed if compared to conventional cold tungsten as well as to Schottky field emitters.
CITATION STYLE
Schoessler, C., & Koops, H. W. P. (1997). Nanostructured integrated electron source. In Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC (pp. 772–777). IEEE. https://doi.org/10.1116/1.589921
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