Porous indium phosphide: Preparation and properties

Abstract

Porous semiconductors attract the attention of many researchers due to the relatively simple technology of obtaining them and possibility of controlling the geometry parameters of the pores (from nanometer-to micrometer-scale objects), as well as prospects of manufacturing of combined optoelectronic devices, in which information is processed not only in an electronic but also in an optical form. In this work the analysis of the dependence of the porous InP morphology on the type of reacting anion is presented. It is shown that nanoporous InP layers are obtained through certain conditions of electrochemical etching. The observation results of InP-layered heterogeneity are discussed and explained in terms of the features of the growing process of heavily doped crystals. Using scanning electron microscopy, the influence of dislocations on the mechanism of pore formation during electrolytic etching of single-crystal InP is shown. In this work the photoelectrochemical method for texturing the monocrystal InP surface is proposed. By means of the scanning electron microscopy the optimal formation conditions of the samples with developed morphology and uniform cluster distribution over InP surface are established.