CITATION STYLE
Schmeißer, D., Hoffmann, P., & Beuckert, G. (2006). Electronic Properties of the Interface Formed by Pr2O3 Growth on Si(001), Si(111) and SiC(0001) Surfaces. In Materials for Information Technology (pp. 449–459). Springer-Verlag. https://doi.org/10.1007/1-84628-235-7_36
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