The thermoelectric characteristics of commercial polycrystalline Mg 2Si doped with Bi, Al + Bi, Ag, and Cu were examined. The samples for the thermoelectric measurements were prepared using the plasma-activated sintering (PAS) technique. The measured values of the Seebeck coefficient were compared with values calculated using the all-electron band-structure calculation package (ABCAP) based on a full-potential augmented-plane-wave (FLAPW) band-structure calculation in a local density approximation (LDA). For the Bi + Al-co-doped samples, the observed values of the dimensionless figure of merit, ZT, were higher than those of solely Bi-doped samples. The maximum value obtained for Bi + Al-doped Mg 2Si was 0.77 at 862 K. For the Ag-doped samples, ZT was significantly lower than that of the Bi + Al-doped samples, with the maximum value being about 0.11 at 873 K. © 2010 TMS.
CITATION STYLE
Sakamoto, T., Iida, T., Matsumoto, A., Honda, Y., Nemoto, T., Sato, J., … Takanashi, Y. (2010). Thermoelectric characteristics of a commercialized Mg 2Si source doped with Al, Bi, Ag, and Cu. Journal of Electronic Materials, 39(9), 1708–1713. https://doi.org/10.1007/s11664-010-1155-y
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