Observation of Anomalous Resistance Behavior in Bilayer Graphene

Abstract

Our measurement results have shown that bilayer graphene exhibits an unexpected sharp transition of the resistance value in the temperature region 200~250 K. We argue that this behavior originates from the interlayer ripple scattering effect between the top and bottom ripple graphene layer. The inter-scattering can mimic the Coulomb scattering but is strongly dependent on temperature. The observed behavior is consistent with the theoretical prediction that charged impurities are the dominant scatters in bilayer graphene. The resistance increase with increasing perpendicular magnetic field strongly supports the postulate that magnetic field induces an excitonic gap in bilayer graphene. Our results reveal that the relative change of resistance induced by magnetic field in the bilayer graphene shows an anomalous thermally activated property.