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Transient Characteristics in Reverse Conducting Thyristors Fabricated on a P-substrate and an N-substrate

  • Shimoda Y
  • Sato H
IEEJ Transactions on Electronics, Information and Systems (1999) 119(8-9) 1004-1009
DOI: 10.1541/ieejeiss1987.119.8-9_1004
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Shimoda, Y., & Sato, H. (1999). Transient Characteristics in Reverse Conducting Thyristors Fabricated on a P-substrate and an N-substrate. IEEJ Transactions on Electronics, Information and Systems, 119(8–9), 1004–1009. https://doi.org/10.1541/ieejeiss1987.119.8-9_1004

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