TIME-RESOLVED PHOTOLUMINESCENCE FROM GaAs/Al//x Ga//1// minus //x AS QUANTUM WELLS GROWN BY METAL-ORGANIC CHEMICAL VAPOR DEPOSITION.

Abstract

Summary form only given. The quantum well material investigated was grown by metal-organic chemical vapor deposition (MOCVD) in a reactor which routinely produces high-power lasers, whereas previous studies have focused on molecular beam epitaxy grown material. Data were taken at temperatures from 16 to 300 K and over a wide range of excitation densities from 647-nm excitation. Room-temperature time resolved photoluminescence was also observed from 752-nm excitation. Comparison with 647-nm excitation confirmed expectations that the collection time into the well from the continuum is not slow on the nanosecond time scale. The authors discuss their rate equation model for carrier populations in the presence of traps with finite lifetime.