n-GaN/ AlN heterostructures were grown by molecular beam epitaxy on Si(111) substrates.The GaN films were n-type doped with silicon and the effect of doping concentration on the structural and optical properties was studied. Si doping promotes a reduction of dislocation density as revealed by x-ray data analysis and Transmission Electron Microscopy. Furthermore, a decrease in the yellow band measured by Photoluminescence Spectroscopy was observed when silicon doping concentration was increased up to 1.7 × 1019 atoms cm−3. A particular mosaic structure was induced by the Si-doping as inferred from Rutherford Backscattering measurements. The crystal quality shows a small degradation for very heavily doped samples (1.3 × 1020 atoms cm−3).
CITATION STYLE
Zambrano-Serrano, M. A., Hernández, C. A., de Melo, O., Behar, M., Gallardo-Hernández, S., Casallas-Moreno, Y. L., … López-López, M. (2022). Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures. Materials Research Express, 9(6). https://doi.org/10.1088/2053-1591/ac7512
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