Intrinsic parameter fluctuations in conventional MOSFETs until the end of the ITRS: A statistical simulation study

Abstract

Variability in device characteristics will affect the scaling and integration of next generation nano-CMOS transistors. Intrinsic parameter fluctuations introduced by random discrete dopants, line edge roughness and oxide thickness fluctuations are among the most important sources of variability. In this paper the variability introduced by the above sources is studied in a set of well scaled MOSFETs with channel lengths of 25, 18, 13, and 9 nm. The effect of each source of intrinsic parameter fluctuation is quantified and compared. The random discrete dopants are responsible for the strongest variations followed closely by line edge roughness. The statistical independence of the different sources of fluctuations is also studied in the case of a 35 nm MOSFET. © 2006 IOP Publishing Ltd.