CHARGE TRAPPING IN SiO//2.

Abstract

The author updates previous reviews of electron and hole trapping phenomena in thin SiO//2-layers thermally grown on silicon used in metal-oxide-semiconductor (MOS) devices. After a brief description of the techniques used for charge injection into the oxide and of methods for trap and charge probing, the effects of a wide range of processing steps on charge trapping are discussed. Whenever possible models for the origin of the defect centers and for their removal are presented.