Abstract
We demonstrate a novel long-wavelength vertical-cavity laser structure employing two AlAs/GaAs mirrors and a strain-compensated InGaAsP quantum-well active region. The lasers have been fabricated by wafer fusion and have the lowest room-temperature pulsed threshold current density of 3 kA/ cm2 at 1.52 μm. Eight laser sizes ranging from 9 to 60 μm were fabricated with threshold currents as low as 12 mA. Single transverse mode operation was observed on the 9 μm device, while other devices lased multimode. The maximum pulsed output power was 7 mW.© 1995 American Institute of Physics.
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CITATION STYLE
Babić, D. I., Dudley, J. J., Streubel, K., Mirin, R. P., Bowers, J. E., & Hu, E. L. (1995). Double-fused 1.52-μm vertical-cavity lasers. Applied Physics Letters, 1030. https://doi.org/10.1063/1.113564
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