Engineering Topological Surface State of Cr-doped Bi2Se3 under external electric field

Abstract

External electric field control of topological surface states (SSs) is significant for the next generation of condensed matter research and topological quantum devices. Here, we present a first-principles study of the SSs in the magnetic topological insulator (MTI) Cr-doped Bi 2 Se 3 under external electric field. The charge transfer, electric potential, band structure and magnetism of the pure and Cr doped Bi 2 Se 3 film have been investigated. It is found that the competition between charge transfer and spin-orbit coupling (SOC) will lead to an electrically tunable band gap in Bi 2 Se 3 film under external electric field. As Cr atom doped, the charge transfer of Bi 2 Se 3 film under external electric field obviously decreases. Remarkably, the band gap of Cr doped Bi 2 Se 3 film can be greatly engineered by the external electric field due to its special band structure. Furthermore, magnetic coupling of Cr-doped Bi 2 Se 3 could be even mediated via the control of electric field. It is demonstrated that external electric field plays an important role on the electronic and magnetic properties of Cr-doped Bi 2 Se 3 film. Our results may promote the development of electronic and spintronic applications of magnetic topological insulator.