Self-formation of semiconductor quantum dots

Abstract

We reviewed the self-formation control of InAs/GaAs quantum dots (QDs) by molecular beam epitaxy. Uniform InAs/GaAs QDs were demonstrated by self-size-limiting effect, the optimized capping growth, and the closely stacked growth using the nanoholes. High-density InAs QDs were achieved by Sb-mediated growth. In addition, an intermittent growth method was presented for ultralow density InAs QDs. Furthermore, the vertical and in-plane arrangements of InAs/GaAs QDs were attempted by using the strain-controlled underlying layers. One-dimensional QD chains were spontaneously formed along the [1-10] direction on the GaAs/InGaAs/GaAs(001) buffer layers. Two-dimensional arrangement of InAs QDs was demonstrated by using GaAsSb/GaAs(001) buffer layers.