Abstract
Wet chemical etching techniques etch isotropically, giving rise to edge profiles. The concavity of the etched feature undercuts the resist and the etch does not faithfully reproduce the dimensions of the mask. This undercutting becomes a problem when the ratio of feature width to layer thickness drops below about 5. Planar etching technologies have sufficient anisotropic etch profiles to permit the manufacture of devices with ratio of 2 or less.
Cite
CITATION STYLE
APA
Hutt, M. (1979). ETCHING TECHNOLOGY. Water Resources and Environmental Engineering Research Report (State University of New York at Buffalo, Department of Civil Engineering). https://doi.org/10.1007/978-3-658-41041-4_5
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