Abstract
Ni/Au Schottky contacts to AlGaN/GaN HEMT were formed by E-beam evaporation technique and lift-off process. The contacts were Rapid thermal annealed at 300 °C for duration of 2 min to 10 min. A significant suppression in gate leakage current was observed at 2 min and 4 min annealing. At further higher annealing duration deterioration in the reverse gate characteristics was observed.
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Mahajan, S. S., Tomar, A., Laishram, R., Kapoor, S., Mailk, A., Naik, A. A., … Sehgal, B. K. (2014). Gate leakage current suppression in AlGaN/GaN HEMT by RTP annealing. In Environmental Science and Engineering (pp. 145–147). Springer Science and Business Media Deutschland GmbH. https://doi.org/10.1007/978-3-319-03002-9_37
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