Impact of Fin Sidewall Taper Angle on Sub-14nm FinFET Device Performance

Abhisek Dixit; Terence B. Hook; Jeffrey B. Johnson; E. J. Nowak; Kota V. Murali

Conference Proceedings

Impact of Fin Sidewall Taper Angle on Sub-14nm FinFET Device Performance

Dixit A
Hook T
Johnson J
et al.

Environmental Science and Engineering (2014) 1-4

DOI: 10.1007/978-3-319-03002-9_1

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Abstract

Recent advances in FinFET technology include fins with tapered sidewalls in addition to conventional vertical sidewall fins. Our 3-D TCAD simulation results suggest that for low to moderately doped fins, vertical sidewall fins have superior electrical performance. Only at extremely high fin doping concentrations could tapered sidewall fins be electrically beneficial.

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FinFET
sidewall tapering and TCAD

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Dixit, A., Hook, T. B., Johnson, J. B., Nowak, E. J., & Murali, K. V. (2014). Impact of Fin Sidewall Taper Angle on Sub-14nm FinFET Device Performance. In Environmental Science and Engineering (pp. 1–4). Springer Science and Business Media Deutschland GmbH. https://doi.org/10.1007/978-3-319-03002-9_1

Impact of Fin Sidewall Taper Angle on Sub-14nm FinFET Device Performance

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