Drift mobilities of Na+ and K+ ions in SiO 2 films

Abstract

Na+ and K+ ion mobilities in thermally grown SiO 2 films have been determined from transient ion curret measurements in MOS capacitors. The mobilities were determined from the observed transit times of Na+ and K+ ions measured in the temperature ranges 40-180°C and 230-300°C, respectively. For Na+ ions in both a dry-grown oxide and one grown in a 10% HCl/oxygen mixture, μ=1.0 exp(-0.66 eV/kT) cm2/V sec. For K+ ions in a dry-grown oxide, μ=0.03 exp(-1.09 eV/kT) cm2/V sec.