Performance of Various SiC Devices and their Behavior in DC/DC Converter

Citations of this article
Mendeley users who have this article in their library.
Get full text


An extensive research on nano materials was carried out and the properties of Si were studied, Post study it was felt that there must be a material which exhibits semiconducting properties of Si with high breakdown voltage and work till high temperature range. Silicon Carbide (SiC) devices provided the answer for this. These devices are well known for high frequency, high voltage, high temperature and high power for their good material properties compared with silicon power MOSFET. In this paper, a study was conducted on various Silicon Carbide devices available in the market and the comparative performance of these devices were analysed. Furthermore there is a comparison of N channel silicon MOSFET device and silicon carbide device placed in bidirectional DC/DC buck converter in which Silicon Carbide device exhibit superior properties than Si device.




Performance of Various SiC Devices and their Behavior in DC/DC Converter. (2019). International Journal of Innovative Technology and Exploring Engineering, 9(2S3), 62–67.

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free