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Characteristics of Surface-Barrier Structures on Zinc Diarsenide with Hole Conductivity

IFMBE Proceedings (2022) 87 92-99
DOI: 10.1007/978-3-030-92328-0_13
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Abstract

The surface-barrier photosensitive structures based on zinc diarsenide crystals with metals have been produced. The electrical and photovoltaic properties of these structures were investigated. The photocurrent spectra and electrical characteristics are determined by the parameters of the semiconductor and the physicochemical properties of the contacting metals.

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Stamov, I. G., Tkachenko, D. V., & Strel’chuk, Y. (2022). Characteristics of Surface-Barrier Structures on Zinc Diarsenide with Hole Conductivity. In IFMBE Proceedings (Vol. 87, pp. 92–99). Springer Science and Business Media Deutschland GmbH. https://doi.org/10.1007/978-3-030-92328-0_13

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