In this review, a comprehensive survey of different oxide-based resistive random-access memories (RRAMs) for neuromorphic computing is provided. We begin with the history of RRAM development, physical mechanism of conduction, fundamental of neuromorphic computing, followed by a review of a variety of RRAM oxide materials (PCMO, HfOx, TaOx, TiOx, NiOx, etc.) with a focus on their application for neuromorphic computing. Our goal is to give a broad review of oxide-based RRAM materials that can be adapted to neuromorphic computing and to help further ongoing research in the field.
CITATION STYLE
Hong, X. L., Loy, D. J. J., Dananjaya, P. A., Tan, F., Ng, C. M., & Lew, W. S. (2018, June 1). Oxide-based RRAM materials for neuromorphic computing. Journal of Materials Science. Springer New York LLC. https://doi.org/10.1007/s10853-018-2134-6
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