The effects of temperature on the growth of a lead-free perovskite-like (CH3NH3)3Sb2Br9 single crystal for an msm photodetector application

Abstract

We have fabricated a photodetector based on (CH3NH3)3Sb2Br9 (MA3Sb2Br9) lead-free perovskite-like single crystal, which plays an important role in the optoelectronic characteristics of the photodetector as a perovskite-like photosensitive layer. Here, MA3Sb2Br9 single crystals were synthesized by an inverse temperature crystallization process with a precursor solution at three different growth temperatures, 60◦C, 80◦C, and 100◦C. As a result, a MA3Sb2Br9 single crystal with an optimum growth temperature of 60◦C presented a low trap density of 2.63 × 1011 cm−3, a high charge carrier mobility of 0.75 cm2 V−1 s−1, and excellent crystal structure and optical absorption properties. This MA3Sb2Br9 perovskite-like photodetector displayed a low dark current of 8.09 × 10−9 A, high responsivity of 0.113 A W−1, and high detectivity of 4.32 × 1011 Jones.