Modeling and Performance Analysis of n-FinFETs: A Comparative Study

Abstract

A comparative analysis of full electrostatic performance and RF characteristics of n-type FinFETs is carried out by using the different physical models. Quantum confinement effects are shown to be significant in sub-100 nm FinFET devices. In the simulation, the ATLAS device simulation tool is used in which various quantum corrections are implemented in models such as (Drift-Diffusion) DD, (Density-Gradient) DG, (Energy Balance) EB, and (Bohm Quantum Potential) BQP. It has been shown that the FinFETs possess the key advantages for applications in RF electronics, around ~15 GHz of transition frequency (ft) where the unilateral power gain-bandwidth product is important for the devices.