Quantum photovoltaic devices based on antimony compound semiconductors

Abstract

In summary, we have successfully developed the empirical tight-binding modeling for the design of Type II InAs/GaSb superlattices. We have demonstrated very high quality superlattice material growths using state-of-the-art MBE. With our established device processing techniques, we demonstrated high performance photodiodes and the world's first infrared focal plane array in the LWIR range based on this type of superlattice. We also calculated the wavelength variations based on quantum confinement effects in the nanopillars and demonstrated the initial results for the processing of nanopillar photodiodes based on Type II superlattices. © 2006 Springer-Verlag London Limited.