Photoconductive relaxation studies of SnSe thin films

Abstract

The compound tin selenide was prepared from the constituent elements (Sn and Se) using the standard fusing technique and from X-ray diffraction studies it was identified as tin selenide. Thin films of SnSe were obtained on thoroughly cleaned glass substrates by vacuum sublimation on substrates maintained at 301 K. The photoconductive relaxation of these films was studied with oxidation. The results have been explained with the help of grain boundary potential barrier model.