Evidence for topological edge states in a large energy gap near the step edges on the surface of ZrTe5

Abstract

Two-dimensional topological insulators with a large bulk band gap are promising for experimental studies of quantum spin Hall effect and for spintronic device applications. Despite considerable theoretical efforts in predicting large-gap two-dimensional topological insulator candidates, none of them have been experimentally demonstrated to have a full gap, which is crucial for quantum spin Hall effect. Here, by combining scanning tunneling microscopy/spectroscopy and angle-resolved photoemission spectroscopy, we reveal that ZrTe5 crystal hosts a large full gap of ~100 meV on the surface and a nearly constant density of states within the entire gap at the monolayer step edge. These features are well reproduced by our first-principles calculations, which point to the topologically nontrivial nature of the edge states.