A NEW SUPERJUNCTION POWER MOSFET WITH OXIDE-PILLAR-IN-DRIFT REGION

Abstract

In this paper, we propose a new SJMOSFET with oxide pillar in its drift region that shows an improvement in its breakdown performance and relation between the Bv and Ron become more linear as compared to the conventional SJMOSFET due to a reduction in the vertical electric field. Simulations has been done using PISCES-II device simulator. The effect of oxide pillar width has also been done and analyzed.