Distinct processes in radio-frequency reactive magnetron plasma sputter deposition of silicon suboxide films

Abstract

A detailed investigation of the distinct processes in radio-frequency reactive magnetron plasma sputter deposition of Si Ox films in a O2 Ar atmosphere has been carried out, using the experimental evaluation of the individual growth rates of silicon and oxygen and of the ion impingement on the growth surface. Experimental variables are the total pressure, the oxygen partial pressure necessary to grow layers with 0≤x≤2, the RF power, the substrate temperature during deposition and the height of the cathode with respect to the growth surface. The various possible contributions to the silicon and oxygen incorporation on the growth surface have been distinguished and the magnitude of their contribution estimated, including that of sputtered SiO molecules. A model concerning the oxygen coverage on the cathode erosion area during sputtering is discussed, including the transition from the metallic cathode to the poisoned, nonmetallic, cathode. © 2007 American Institute of Physics.