1.3 μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100°C

Abstract

A high-performance 1.3 μm InAs/GaAs quantum-dot laser directly grown on Si substrates has been achieved by using InAlAs/GaAs strained-layer superlattice serving as dislocation filter layers (DFLs). The Si-based laser achieves lasing operation up to 111°C with a threshold current density of 200 A/cm2and an output power exceeding 100 mW at room temperature.