The authors report a silicon-based one-diode-type resistive-switching memory (RRAM) device with self-rectifying properties and high electrical properties. The RRAM cell consisted of Al/Cr-SrTiO 3/Si and revealed intrinsic diode properties, so that unwanted sneaky currents could be removed from an RRAM crossbar array without extra switching devices. The insulator-metal transition property of the proposed device was explained using the space-charge-limited conduction mechanism. The memory device showed good characteristics including high ON/OFF ratio (~10 6), low reset current (~10 -11 A), high speed at low voltage (200 ns, 2 V), and reasonable endurance (>10 4 cycles) and retention characteristics (>10 4 s). © 2012 The Japan Society of Applied Physics.
CITATION STYLE
Song, M. Y., Seo, Y., Kim, Y. S., Kim, H. D., An, H. M., Park, B. H., … Kim, T. G. (2012). Realization of one-diode-type resistive-switching memory with Cr-SrTiO 3 film. Applied Physics Express, 5(9). https://doi.org/10.1143/APEX.5.091202
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