Depth distribution of B implanted in Si after excimer laser irradiation

Abstract

Liquid phase epitaxial regrowth following laser melting significantly modifies the concentration of point defects in Si, such that peculiar depth distribution of subsequently implanted B arises. At room temperature, a large fraction of B atoms, ~15%, implanted in laser preirradiated Si, migrate up to the original melt depth. During high temperature annealing, the nonequilibrium diffusion of B is reduced to ~25% of that measured in unirradiated Si. Both these phenomena are conclusively attributed to an excess of vacancies, induced in the lattice during solidification and to their interaction with impurities and dopant. © 2005 American Institute of Physics.