Reliability issues in AlGaN/GaN high electron mobility transistors

Abstract

As AlGaN/GaN high electron mobility transistors gain commercial acceptance for use in high-power and high-frequency applications, it is becoming ever important to understand the degradation mechanisms that drive failure in the field. Because of the complex nature and multifaceted operation modes of these devices, reliability studies must go beyond the typical Arrhenius accelerated life tests. To do this, we investigated the electric field-driven degradation in devices with different gate metallization, device dimensions, and electric field mitigation techniques (such as source field plate) and the effect of device fabrication processes for both dc and RF stress conditions.