PENGARUH PROFILE BASIS PADA HETERO JUNCTION BIPOLAR TRANSISTOR SILIKON GERMANIUM (SIGE HBT). TERHADAP PARAMETER SCATTERING

Abstract

ABSTRACTTechnology of modern Silicon epitaxy at heterojunctions (Si) and Germanium (Ge) likes SiGe, MBE, (Molecular Beam Epitaxy), UHV/CVD (Ultra High Vacuum Chemical Vapor Deposition/) and LPCVD (Low Pressure Chemical Vapor Deposition) are used for the realization of profile Ge doping on the design of Bipolar Transistor Heterojunctions (HBT).This Research is  conducted  on simulation and   analysis of   Ge doping profile in   HBT   with a square profile shape, triangle and Trapezoid with mole fraction (x) 0.1 and0.2. The model design of the HBT Structure analyzed has wide collector (Wc) 350 nm, Doping the collector (Nc) 3.1017, Wide base (Wb) 40 nm, the concentration of base (Nb) 1019 cm-3, AE 0.25 × 10 µ m2, WE 10 nm, NE maximum 1021 cm-3. SiGe graded Profile with settings in the base gives the different influences on  the frequency  threshold and the   maximum Frequency with   different current gain   (Ai) almost   the same which is around 60 dB antil 70 dB. As such generated that Ge Profile rectangular generate scattering parameters required are wider than others i.e. for S11 0.18 < (max.), S12 0.0175 < 2.88 9 (min) and 56 < 178 (max) and S220.27 < 12 (min) and, 0.42 <9(min) dan 56.99<178 (maks) serta S22 0.27<12(min) dan, 0.42