In order to utilize perpendicular spin-torque-transfer magnetic-random-access-memory (p-STT MRAM) as a storage class memory, the achievement of performing multi-level-cell (MLC) operation is important in increasing the integration density of p-STT MRAM. For a double pinned perpendicular magnetic tunneling junction spin-valve performing MLC (i.e., four-resistance level) operation, the uniformity in the resistance difference between four-level resistances was investigated theoretically and experimentally. The uniformity in the resistance difference between four-level resistances was strongly dependent on the top MgO tunneling-barrier thickness. Particularly, the most uniform resistance difference between four resistance states could be achieved at a critical top-MgO tunneling thickness (i.e., ∼1.15 nm).
CITATION STYLE
Jun, H. S., Choi, J. Y., Ashiba, K., Jung, S. H., Park, M., Baek, J. U., … Park, J. G. (2020). Multi-level resistance uniformity of double pinned perpendicular magnetic-tunnel-junction spin-valve depending on top MgO barrier thickness. AIP Advances, 10(6). https://doi.org/10.1063/5.0007064
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