This study investigated the crystallographic plane dependence of the reaction of AlN and AlGaN using heated-pressurized water under saturated vapor pressure. The results show that the reaction strongly depends on the crystallographic orientation plane, with no reaction in the +c-plane, the formation of an AlOOH-altered layer in the −c-plane, and etching in the a- and m-planes. These results suggest that the exfoliation mechanism of AlGaN grown on periodically formed AlN nanopillars on sapphire substrates using heated-pressurized water involves etching of a- and m-plane crystals, demonstrating that the proposed method is highly reproducible and versatile for large-diameter wafer exfoliation.
CITATION STYLE
Yamada, R., Matsubara, E., Kondo, R., Nishibayashi, T., Hattori, K., Imoto, Y., … Iwaya, M. (2023). Exfoliation mechanism of AlGaN-based thin films using heated-pressurized water. Applied Physics Express, 16(10). https://doi.org/10.35848/1882-0786/acfec9
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