Growth of 3C-SiC phase on silica-carbon composite with the carbothermal reduction method

1Citations
Citations of this article
10Readers
Mendeley users who have this article in their library.

This article is free to access.

Abstract

Growth of 3C-SiC phase on silica-carbon composites has been conducted. Silica (95,48%) was obtained from rice husk purified using HCl then characterized with X-Ray Fluorescence (XRF), X-Ray Diffraction (XRD) and Fourier Transform Infra-Red (FTIR). The carbon source was from activated carbon. Silicon carbide formation was synthesized using the carbothermal reduction method at temperature 1150 °C, 1300 °C, and 1450 °C. Characterization of silicon carbide phase was performed by X-Ray Diffraction (XRD) and UV-Vis Spectrophotometer. The increased temperature on carbothermal reduction process related to the intensity improvement of 2θ phase 3C-SiC(111) which indicates that the 3C-SiC phase is increasingly formed. The 3C-SiC(220) phase crystallite size increased from 20.37 nm to 22.66 nm. The formation of 3C-SiC phase and crystalline size affected on the electronic properties of the synthesized material. The band gap decreased by the increased of 3C-SiC phase formed from ∼3,2 eV (1150 °C) to ∼2,7 eV (1300 °C) and ∼2,7 eV (1450 °C).

Cite

CITATION STYLE

APA

Ichsan, S., Fuady, M. I. A., Wahyuningsih, S., & Ramelan, A. H. (2019). Growth of 3C-SiC phase on silica-carbon composite with the carbothermal reduction method. In IOP Conference Series: Earth and Environmental Science (Vol. 299). Institute of Physics Publishing. https://doi.org/10.1088/1755-1315/299/1/012068

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free