GaN-nanowire/Si solar cell: Numerical modeling, fabrication and characterization

Abstract

A silicon (111) based solar cell with an emitter layer of an array of GaN nanowires was proposed, synthesized, and studied. Theoretical and experimental volt-ampere and spectral characteristics of the solar cell were compared and analyzed. The density of surface states and lifetime of minority carriers in the active region were obtained with the use of numerical modeling. A significant effect of recombination on efficiency was demonstrated. The modeling results correspond well to the experimental data obtained via the characterization of the SC prototype.