Compact 20-W gan internally matched power amplifier for 2.5 ghz to 6 ghz jammer systems

Abstract

In this paper, we demonstrate a compact 20-W GaN internally matched power amplifier for 2.5 to 6 GHz jammer systems which uses a high dielectric constant substrate, single-layer capacitors, and shunt/series resistors for low-Q matching and low-frequency stabilization. A GaN high-electron-mobility transistor (HEMT) CGH60030D bare die fromWolfspeed was used as an active device, and input/output matching circuits were implemented on two dierent substrates using a thin-film process, relative dielectric constants of which were 9.8 and 40, respectively. A series resistor of 2.1 Ω was chosen to minimize the high-frequency loss and obtain a flat gain response. For the output matching circuit, double λ/4 shorted stubs were used to supply the drain current and reduce the output impedance variation of the transistor between the low-frequency and high-frequency regions, which also made wideband matching feasible. Single-layer capacitors eectively helped reduce the size of the matching circuit. The fabricated GaN internally matched power amplifier showed a linear gain of about 10.2 dB, and had an output power of 43.3-43.9 dBm (21.4-24.5 W), a power-added eciency of 33.4-49.7% and a power gain of 6.2-8.3 dB at the continuous-wave output power condition, from 2.5 to 6 GHz.