Semiconductor Device Technology

Abstract

2.1. Introduction 2.2. Oxidation 2.2.1. Oxidation process 2.2.2. Modeling of oxidation 2.2.3. Factors influencing oxidation rate 2.2.4. Oxide thickness characterization 2.3. Diffusion of dopants 2.3.1. Diffusion process 2.3.2. Constant-source diffusion: predeposition 2.3.3. Limited-source diffusion: drive-in 2.3.4. Junction formation 2.4. Ion implantation of dopants 2.4.1. Ion generation 2.4.2. Parameters of ion implantation 2.4.3. Ion range distribution 2.5. Characterization of diffused and implanted layers 2.5.1. Sheet resistivity 2.5.2. Junction depth 2.5.3. Impurity concentration 2.6. Summary 2.1. Introduction In the previous Chapter, we have reviewed the various techniques used to synthesize semiconductor crystals and thin films. This represented only the first step in the fabrication of semiconductor devices. Several additional steps are necessary before a final product can be obtained, which will be described in this and the following Chapter. In this Chapter, the discussion will be inspired from the silicon device technology because of its technological predominance and maturity in modern semiconductor industry. We will first describe and model the oxidation process used to realize a silicon oxide film. We will then discuss